Electron affinity of pentacene thin film studied by radiation-damage free inverse photoemission spectroscopy

[ABSTRACT] The electron affinity of pentacene thin films has been evaluated during the last decades, but it is still under controversial due to varieties of film quality and radiation damages of the films introduced during inverse photoemission spectroscopy (IPES) experiment together with insufficient energy resolution of the instruments. We employed the near-ultraviolet IPES with a better energy resolution 0.27 0.32 eV and using lower energy electron beams (0 eV Ei 4.9 eV) to study the unoccupied states of pentacene thin film. Due to a large mean-free-path of the electron in this energy region, the threshold electron affinity of the bulk of pentacene film was precisely determined to be 2.7060.03 eV. Using the threshold ionization energy of 4.9060.05 eV determined by ultraviolet photoemission spectroscopy, the band-gap energy of the pentacene film is obtained to be 2.2060.06 eV

https://opac.ll.chiba-u.jp/da/curator/105792/

https://opac.ll.chiba-u.jp/da/curator/105792/appl_phys_lett_103-123303.pdf

AIP Publishing

学術雑誌論文

Applied Physics Letters

103

123303

2013-09-17

10.1063/1.4821445

publisher

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters 103, 123303 (2013) and may be found at https://aip.scitation.org/doi/10.1063/1.4821445.