Effects of gas cluster ion beam sputtering on the molecular orientation of organic semiconductor films : Ultraviolet photoelectron spectroscopy study of [6]phenacene

吉田, 弘幸

[ABSTRACT] The alignment of organic layer and metal layer energy levels within organic semiconductor devices is critical for efficient charge injection/collection at the electrodes. The electronic structure at the interface is usually examined using ultraviolet photoelectron spectroscopy (UPS) as the film thickness of the organic layer is built up incrementally (bottom-up method). As such, the morphology and crystallinity of the films that are examined using this technique may be different from the films used in actual devices because these properties are sensitive to the way in which the films are prepared. We have prepared [6]phenacene thin films with standing and lying molecular orientations on naturally oxidized silicon (SiO2) and highly oriented pyrolytic graphite (HOPG) surfaces, respectively. UPS measurements were performed on films that were incrementally decreased in thickness using gas cluster ion beam (GCIB) sputtering (top-down method). The spectral shapes and ionization energies of the films that were formed using the bottom-up and top-down methods were similar. Importantly, the characteristic features of a monolayer on the HOPG substrate were also observed when a thick film (i.e., not built up in layers using the bottom-up method) was thinned down by GCIB sputtering. We have shown that UPS combined with GCIB sputtering is a useful technique for examining the energy level alignment of interfaces within films that are fabricated using conditions similar to those used for real devices.

https://opac.ll.chiba-u.jp/da/curator/108507/

https://opac.ll.chiba-u.jp/da/curator/108507/appl_phys_lett_114-231603.pdf

AIP Publishing

学術雑誌論文

Applied Physics Letters

114

231603

2019-06-11

10.1063/1.5094952

publisher

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters 114, 231603 (2019) and may be found at https://aip.scitation.org/doi/10.1063/1.5094952.