Carrier-injection and succeeding pre-channel formation in organic thin-film transistor observed with time-domain reflectometry

酒井, 正俊

[Abstract] Carrier-injection and the succeeding pre-channel-formation dynamics in organic thin-film transistor was observed using time-domain reflectometry. Having previously analyzed the depth-wise variation in the initial carrier-injection from the contact electrode to the channel region, we focus here on the succeeding pre-channel-formation dynamics. We demonstrate that a hole concentration in the semiconductor/gate insulator interface increases until its electrical capacitance is filled through contact and access resistances. Thereafter, the injected-hole dis-tribution gradually spreads. A reduction in both contact and access resistances is crucial not only for the static characteristics of the field effect transistor but also the dynamical response.

https://opac.ll.chiba-u.jp/da/curator/900119963/

https://opac.ll.chiba-u.jp/da/curator/900119963/JAP128_085502_2020.pdf

AIP Publishing

学術雑誌論文

Journal of Applied Physics

128

8

085502

2020-08-28

10.1063/5.0011150

publisher

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 128, 085502 (2020) and may be found at https://doi.org/10.1063/5.0011150.